SSM6K810R
SSM6K810R is Silicon N-channel MOSFET manufactured by Toshiba.
Features
(1) AEC-Q101 qualified (Note 1) (2) 175 MOSFET (3) 4.5-V drive (4) Low drain-source on-resistance
: RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 51 mΩ (typ.) (@VGS = 10 V)
Note 1: For detail information, please contact our sales.
3. Packaging and Pin Assignment
TSOP6F
1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6: Drain
©2018-2020 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2019-03
2020-09-24 Rev.4.0
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
Drain current (pulsed)
(t ≤ 10 ms) (Note 1), (Note 2)
Power dissipation
(Note 3)
Power dissipation
(t ≤ 10 s)
(Note 3)
Single-pulse avalanche energy
(Note 4)
21.4 m...
