SSM6K819R
SSM6K819R is Silicon N-Channel MOSFET manufactured by Toshiba.
Features
(1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4.5-V drive (3) Low drain-source on-resistance
: RDS(ON) = 25.8 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 20.9 mΩ (typ.) (@VGS = 10 V)
3. Packaging and Internal Circuit
1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6: Drain
TSOP6F
4. Orderable part number
Orderable part number
AEC-Q101
Note
SSM6K819R,LF SSM6K819R,LXGF SSM6K819R,LXHF
- YES YES
(Note 1)
General Use Unintended Use Automotive Use
Note 1: For more information, please contact our sales or use the inquiry form on our website.
(Note 1)
©2019-2021
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2019-03
2021-05-28 Rev.6.0
5. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
- )
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage
VDSS
VGSS
±20
Drain current (DC) Drain current (pulsed)
(Note 1)
(t ≤ 10 µs)
(Note 1), (Note...
