SSM6K824R
SSM6K824R is Silicon N-Channel MOSFET manufactured by Toshiba.
Features
(1) 1.5-V drive (2) Low drain-source on-resistance
: RDS(ON) = 33 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 74 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 108 mΩ (max) (@VGS = 1.5 V)
3. Packaging and Pin Assignment
TSOP6F
1, 2, 5, 6: Drain 3: Gate 4: Source
©2021
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2021-12
2021-11-02 Rev.1.0
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
- )
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage
VDSS
VGSS
±8
Drain current (DC)
(Note 1)
Drain current (pulsed)
(Note 1), (Note 2)
Power dissipation Power dissipation
(Note 3)
(t ≤ 10 s)
(Note 3)
Channel temperature Storage temperature
Tch
- Tstg
-55 to...
