SSM6K809R Datasheet | Toshiba

Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 - MOSFET (3) 4.0-V drive (4) Low drain-source on-resistance : RDS(ON) = 28 mΩ (typ.) (@VGS = 10 V) RDS(ON) = 36 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 43 mΩ (typ.) (@VGS = 4 V) 3. Packaging and Pin Assignment 1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6: Drain TSOP6F 4. Orderable part number Orderable part number AEC-Q101 Note SSM6K809R,LF SSM6K809R,LXGF SSM6K809R,LXHF - YES YES (Note 1) General Use Unintended Use Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. (Note 1) ©2018-2021 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2019-03 2021-05-28 Rev.4.0 5. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 - ) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS VGSS ±20 Drain current (DC) Drain current (pulsed) (Note 1) (t ≤ 1 ms) (Note 1), (Note...