SSM6K818R
SSM6K818R is Silicon N-Channel MOSFET manufactured by Toshiba.
Features
(1) AEC-Q101 qualified (Note 1) (2) 4.5-V drive (3) Low drain-source on-resistance
: RDS(ON) = 8.0 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 6.5 mΩ (typ.) (@VGS = 10 V)
Note 1: For detail information, please contact our sales.
3. Packaging and Pin Assignment
TSOP6F
1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6: Drain
©2018-2021
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2021-09
2021-09-17 Rev.3.0
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
- )
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage
VDSS
(Note 1)
VGSS
±20
Drain current (DC) Drain current (pulsed)
(Note 2)
(t ≤ 10 µs)
(Note 2), (Note 3)
Power dissipation Power dissipation
(Note 4)
(t ≤ 10 s)
(Note 4)
Single-pulse avalanche energy
(Note...
