TC58BVG1S3HBAI6 Overview
The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: The TC58BVG1S3HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.
TC58BVG1S3HBAI6 Key Features
- Organization
- Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Mul
- Mode control Serial input/output mand control
- Number of valid blocks Min 2008 blocks Max 2048 blocks
- Power supply VCC = 2.7V to 3.6V
- Access time Cell array to register 40 µs typ. (Single Page Read) / 55us typ. (Multi Page Read) Serial Read Cycle 25 ns m
- Program/Erase time Auto Page Program Auto Block Erase
- Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby
- Package P-VFBGA67-0608-0.80-001 (Weight: 0.095 g typ.)
- 8bit ECC for each 528Byte is implemented on the chip