Description
The TC58BVG1S3HTAI0 is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.
Features
- Organization
x8
Memory cell array 2112 × 128K × 8
Register
2112 × 8
Page size
2112 bytes
Block size
(128K + 4K) bytes.
- Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read.
- Mode control Serial input/output Command control.
- Number of valid blocks Min 2008 blocks Max 2048 blocks.
- Power supply VCC = 2.7V to 3.6V.
- Access time Cell arr.
TC58BVG1S3HTAI0 Datasheet
