Description
The TC58BVG2S0HBAI6 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.
Features
- Organization
x8
Memory cell array 4224 × 128K × 8
Register
4224 × 8
Page size
4224 bytes
Block size
(256K + 8K) bytes.
- Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read.
- Mode control Serial input/output Command control.
- Number of valid blocks Min 2008 blocks Max 2048 blocks.
- Power supply VCC = 2.7V to 3.6V.
- Access time Cell arr.
TC58BVG2S0HBAI6 Datasheet
