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TC58NVG4D2FTA00

TC58NVG4D2FTA00 is 16 GBIT (4G x 8 BIT) CMOS NAND E2PROM manufactured by Toshiba.
TC58NVG4D2FTA00 datasheet preview

TC58NVG4D2FTA00 Datasheet

Part number TC58NVG4D2FTA00
Download TC58NVG4D2FTA00 Datasheet PDF
File Size 610.82 KB
Manufacturer Toshiba
Description 16 GBIT (4G x 8 BIT) CMOS NAND E2PROM
TC58NVG4D2FTA00 page 2 TC58NVG4D2FTA00 page 3

Related Toshiba Datasheets

Part Number Description
TC58NVG4D2ETA00 16 GBIT (2G X 8 BIT) CMOS NAND E2PROM
TC58NVG4S2FTA00 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM
TC58NVG0S3AFT00 1 GBit CMOS NAND EPROM
TC58NVG0S3AFT05 1 GBit CMOS NAND EPROM
TC58NVG0S3ETA00 1 GBIT (128M X 8 BIT) CMOS NAND E2PROM

Toshiba datasheets

TC58NVG4D2FTA00 Description

The device has two 8640-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 8640-byte increments. The Erase operation is implemented in a single block unit (1 Mbytes + 56 Kbytes: The TC58NVG4D2 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.

TC58NVG4D2FTA00 Key Features

  • Organization
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, M
  • Mode control Serial input/output
  • Number of valid blocks Min 1968 blocks Max 2076 blocks
  • Power supply VCC = 2.7 V to 3.6 V
  • Access time
  • Program/Erase time Auto Page Program
  • Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby
  • Package (Weight: TBD g typ.)
  • FOR RELIABILITY GUIDANCE, PLEASE REFER TO THE APPLICATION NOTES AND MENTS (17). 24 bit ECC for each 1024 bytes is requir
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