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TC58NVG4D2FTA00 Datasheet 16 GBIT (4G x 8 BIT) CMOS NAND E2PROM

Manufacturer: Toshiba

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General Description

The TC58NVG4D2 is a single 3.3 V 16 Gbit (18,367,119,360 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 448) bytes × 128 pages × 2076 blocks.

The device has two 8640-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 8640-byte increments.

The Erase operation is implemented in a single block unit (1 Mbytes + 56 Kbytes: 8640 bytes × 128 pages).

Overview

TOSHIBA CONFIDENTIAL TC58NVG4D2FTA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 GBIT (4G × 8 BIT) CMOS NAND E2PROM.

Key Features

  • Organization Memory cell array Register Page size Block size TC58NVG4D2F 8640 × 259.5K × 8 8640 × 8 8640 bytes (1M + 56 K) bytes.
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Mullti Page Read.
  • Mode control Serial input/output Command control.
  • Number of valid blocks Min 1968 blocks Max 2076 blocks.
  • Power supply VCC = 2.7 V to 3.6 V.
  • Access time C.

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