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TH58BVG2S3HBAI4 Datasheet

Manufacturer: Toshiba
TH58BVG2S3HBAI4 datasheet preview

TH58BVG2S3HBAI4 Details

Part number TH58BVG2S3HBAI4
Datasheet TH58BVG2S3HBAI4-Toshiba.pdf
File Size 690.29 KB
Manufacturer Toshiba
Description 4-GBIT (512M x 8-BIT) CMOS NAND E2PROM
TH58BVG2S3HBAI4 page 2 TH58BVG2S3HBAI4 page 3

TH58BVG2S3HBAI4 Overview

The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes  4 Kbytes: The TH58BVG2S3HBAI4 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.

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