| Part number | TH58BVG2S3HBAI4 |
|---|---|
| Datasheet | TH58BVG2S3HBAI4-Toshiba.pdf |
| File Size | 690.29 KB |
| Manufacturer | Toshiba |
| Description | 4-GBIT (512M x 8-BIT) CMOS NAND E2PROM |
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The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes 4 Kbytes: The TH58BVG2S3HBAI4 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.
| Part Number | Description |
|---|---|
| TH58BVG3S0HBAI4 | 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM |
| TH58BVG3S0HBAI6 | 8G-BIT (1G x 8 BIT) CMOS NAND E2PROM |
| TH58BVG3S0HTA00 | 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM |
| TH58BVG3S0HTAI0 | 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM |
| TH58BYG3S0HBAI4 | 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM |
| TH58NVG2S3BTG00 | 4-Gbit CMOS NAND EPROM |
| TH58NVG3D4BTG00 | 8 GBIT (1024M x 8 BIT) CMOS NAND E2PROM |
| TH58NVG3S0HBAI4 | 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM |
| TH58NVG3S0HBAI6 | 8G-BIT (1G x 8 BIT) CMOS NAND E2PROM |
| TH58NVG3S0HTA00 | 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM |
