Datasheet4U Logo Datasheet4U.com

TH58BVG3S0HTA00 - 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM

Datasheet Summary

Description

The TH58BVG3S0HTA00 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.

Features

  • Organization x8 Memory cell array 4224 × 128K × 8 × 2 Register 4224 × 8 Page size 4224 bytes Block size (256K + 8K) bytes.
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read.
  • Mode control Serial input/output Command control.
  • Number of valid blocks Min 4016 blocks Max 4096 blocks.
  • Power supply VCC = 2.7V to 3.6V.
  • Access time Cell.

📥 Download Datasheet

Datasheet preview – TH58BVG3S0HTA00

Datasheet Details

Part number TH58BVG3S0HTA00
Manufacturer Toshiba
File Size 691.88 KB
Description 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM
Datasheet download datasheet TH58BVG3S0HTA00 Datasheet
Additional preview pages of the TH58BVG3S0HTA00 datasheet.

📁 Similar Datasheet

  • TH58100FT - TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS (Toshiba Semiconductor)
  • TH58100FTI - TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS (Toshiba Semiconductor)
  • TH58NVG1S3AFT05 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS (Toshiba Semiconductor)
  • TH58NVG4S0FTA20 - 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM (Toshiba Semiconductor)
  • TH58NVG5S0FTA20 - 32-GBIT (4G x 8 BIT) CMOS NAND E2PROM (Toshiba Semiconductor)
  • TH58NVG5S0FTAK0 - 32 GBIT (4G x 8 BIT) CMOS NAND E2PROM (Toshiba Semiconductor)
  • TH58V128DC - 128 Mbit (16M x 8bit) CMOS NAND E2PROM (16M BYTE SmartMedia) (Toshiba Semiconductor)
  • TH58V128FT - 128Mbit (16M x 8bit) CMOS NAND E2PROM (Toshiba Semiconductor)
  • TH50 - HOUR METER (Panasonic)
  • TH501 - HOUR METER (Panasonic)
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
TH58BVG3S0HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58BVG3S0HTA00 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks. The device has a 4224-byte static register which allows program and read data to be transferred between the register and the memory cell array in 4224-bytes increments. The Erase operation is implemented in a single block unit (256 Kbytes + 8 Kbytes: 4224 bytes × 64 pages). The TH58BVG3S0HTA00 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.
Published: |