• Part: TH58BVG3S0HBAI4
  • Description: 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM
  • Manufacturer: Toshiba
  • Size: 386.28 KB
Download TH58BVG3S0HBAI4 Datasheet PDF
TH58BVG3S0HBAI4 page 2
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TH58BVG3S0HBAI4 Key Features

  • Organization
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Mul
  • Mode control Serial input/output mand control
  • Number of valid blocks Min 4016 blocks
  • Power supply VCC = 2.7V to 3.6V
  • Access time
  • Program/Erase time Auto Page Program
  • Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby
  • Package P-TFBGA63-0911-0.80CZ (Weight: 0.165 g typ.)
  • 8bit ECC for each 528Byte is implemented on the chip