TH58NVG4S0FTAK0 Overview
The device has two 4328-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4328-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 14.5 Kbytes: The TH58NVG4S0F is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.
TH58NVG4S0FTAK0 Key Features
- Organization
- Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, M
- Mode control Serial input/output mand control
- Number of valid blocks Min 8032 blocks Max 8192 blocks
- Power supply VCC = 2.7V to 3.6V
- Access time Cell array to register 30 µs max Serial Read Cycle 25 ns min (CL=100pF)
- Program/Erase time Auto Page Program Auto Block Erase
- Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby
- Package TSOP I 48-P-1220-0.50C
- 4bit ECC for each 512Byte is required