TH58NVG4S0HTAK0 - 16G-BIT (2G x 8 BIT) CMOS NAND E2PROM

Product Overview

Toshiba

Datasheet Details

Part number	TH58NVG4S0HTAK0
Manufacturer	Toshiba
File Size	898.08 KB
Description	16G-BIT (2G x 8 BIT) CMOS NAND E2PROM
Datasheet	TH58NVG4S0HTAK0 Datasheet
Additional preview pages of the TH58NVG4S0HTAK0 datasheet.

Product details

Description

The TH58NVG4S0HTAK0 is a single 3.3V 16 Gbit (18,253,611,008 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  256) bytes  64 pages  8192blocks.

Features

Organization x8 Memory cell array 4352  128K  8  4 Register 4352  8 Page size 4352 bytes Block size (256K  16K) bytes.
Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read.
Mode control Serial input/output Command control.
Number of valid blocks Min 8032 blocks Max 8192 blocks.
Power supply VCC  2.7V to 3.6V.
Access time Cell array to register 25 .

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Published: Feb 15, 2017 |