TH58NVG4S0HTAK0
DESCRIPTION
The TH58NVG4S0HTAK0 is a single 3.3V 16 Gbit (18,253,611,008 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 256) bytes 64 pages 8192blocks. The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes 16 Kbytes: 4352 bytes 64 pages).
The TH58NVG4S0HTAK0 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
FEATURES
- Organization x8
Memory cell array 4352 128K 8 4
Register
4352 ...
