Datasheet4U Logo Datasheet4U.com
Toshiba logo

TH58NYG3S0HBAI4

TH58NYG3S0HBAI4 is 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM manufactured by Toshiba.
TH58NYG3S0HBAI4 datasheet preview

TH58NYG3S0HBAI4 Datasheet

Part number TH58NYG3S0HBAI4
Download TH58NYG3S0HBAI4 Datasheet (PDF)
File Size 716.50 KB
Manufacturer Toshiba
Description 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM
TH58NYG3S0HBAI4 page 2 TH58NYG3S0HBAI4 page 3

Related Toshiba Datasheets

Part Number Description
TH58NYG3S0HBAI6 8-GBIT (1G x 8-BIT) CMOS NAND E2PROM
TH58NYG4S0FBAID 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM
TH58NVG2S3BTG00 4-Gbit CMOS NAND EPROM
TH58NVG3D4BTG00 8 GBIT (1024M x 8 BIT) CMOS NAND E2PROM
TH58NVG3S0HBAI4 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM

TH58NYG3S0HBAI4 Distributor

TH58NYG3S0HBAI4 Description

The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes  16 Kbytes: The TH58NYG3S0HBAI4 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.

TH58NYG3S0HBAI4 Key Features

  • Organization
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy
  • Mode control Serial input/output
  • Number of valid blocks Min 4016 blocks Max 4096 blocks
  • Power supply VCC  1.7V to 1.95V
  • Access time
  • Program/Erase time Auto Page Program Auto Block Erase
  • Operating current Read (25 ns cycle)
  • Package P-TFBGA63-0911-0.80CZ (Weight: 0.165 g typ.)
  • 8 bit ECC for each 512Byte is required

More datasheets by Toshiba

See all Toshiba parts

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts