TH58NYG3S0HBAI4
TH58NYG3S0HBAI4 is 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM manufactured by Toshiba.
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
8 GBIT (1G 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TH58NYG3S0HBAI4 is a single 1.8V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 256) bytes 64 pages 4096blocks. The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes 16 Kbytes: 4352 bytes 64 pages).
The TH58NYG3S0HBAI4 is a serial-type memory device which utilizes the I/O pins for both address and...
