TH58NYG3S0HBAI6 Overview
The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 16 Kbytes: The TH58NYG3S0HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.
TH58NYG3S0HBAI6 Key Features
- Organization
- Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, M
- Mode control Serial input/output mand control
- Number of valid blocks Min 4016 blocks Max 4096 blocks
- Power supply VCC = 1.7V to 1.95V
- Access time Cell array to register 25 µs max Read Cycle Time 25 ns min (CL=30pF)
- Program/Erase time Auto Page Program 300 µs/page typ. Auto Block Erase 3.5 ms/block typ
- Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby
- Package P-VFBGA67-0608-0.80-001 (Weight: 0.101 g typ.)
- 8 bit ECC for each 512Byte is required