TIM1414-8 Overview
TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band).
TIM1414-8 Key Features
- High power
- P1dB =39.5 dBm at 14.0 GHz to14.5 GHz
- High gain
- G1dB = 5.0 dB at 14.0 GHz to 14.5 GHz
- Broad Band Internally Matched
- Hermetically sealed package RF Performance Specifications (Ta = 25° C)
- Typ. 39.5 5.0 3.4 20
- Typ. 2400 -3.5 8.0
- 1.6 Max
- 5 10.4