TIM1414-8L Datasheet | Toshiba

.. TOSHIBA MICROWAVE POWER Ga As FET Low Distortion Internally Matched Power Ga As FETs (X, Ku-Band) Features - Low intermodulation distortion - IM3 = -45 d Bc at Po = 28 d Bm, - Single carrier level - High power - P1d B = 39.5 d Bm at 14.0 GHz to 14.5 GHz - High gain - G1d B = 5.0 d B at 14.0 GHz to 14.5 GHz - Broad band internally matched - Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics Output Power at 1d B pression Point Power Gain at 1d B pression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel-Temperature Rise Symbol P1d B G1d B IDS1 ∆G ηadd IM3 IDS2 ∆Tch VDSx IDSx Rth(c-c) Condition Unit d Bm d B A d B Min. 38.5 4.0 - - - -42 - - Typ. 39.5 5.0 3.4 - 20 -45 3.4 - Max - - 4.4 ±0.8 - - 4.4 80 VDS = 9V f = 14.0 ~ 14.5 GHz Data Shee . Note 1 % d Bc A °C Note 1: 2 Tone Test (Pout = 28 d Bm Single Carrier Level). Electrical Characteristics (Ta = 25° C) Characteristic Trans-conductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance Symbol gm VGSoff IDSS VGSO Rth (c-c) Condition VDS = 3V IDS = 4.0A VDS = 3V IDS = 120m A VDS = 3V VGS = 0V IGS = -120µA Channel to case Unit m S V A V °C/W Min. -...