TIM1414-8L Description
TOSHIBA MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band).
TIM1414-8L Key Features
- Low intermodulation distortion
- IM3 = -45 dBc at Po = 28 dBm
- Single carrier level
- High power
- P1dB = 39.5 dBm at 14.0 GHz to 14.5 GHz
- High gain
- G1dB = 5.0 dB at 14.0 GHz to 14.5 GHz
- Broad band internally matched
- Hermetically sealed package RF Performance Specifications (Ta = 25° C)
- Typ. 39.5 5.0 3.4