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TOSHIBA
MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band)
Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 5.0 dB at 14.0 GHz to 14.5 GHz • Broad band internally matched • Hermetically sealed package RF Performance Specifications (Ta = 25° C)
Characteristics Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel-Temperature Rise Symbol P1dB G1dB IDS1 ∆G ηadd IM3 IDS2 ∆Tch VDSxIDSxRth(c-c) Condition Unit dBm dB A dB Min. 38.5 4.0 – – – -42 – – Typ. 39.5 5.0 3.4 – 20 -45 3.4 – Max – – 4.
TIM1414-8L Datasheet
