TK190U65Z Datasheet Silicon N-Channel MOSFET

Manufacturer: Toshiba

Overview: MOSFETs Silicon N-Channel MOS (DTMOS�) TK190U65Z 1. Applications • Switching Power Supplies 2.

Datasheet Details

(1) Low drain-source on-resistance: RDS(ON) = 0.149 Ω (typ. ) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.61 mA) 3. Packaging and Internal Circuit TK190U65Z TOLL 1: Gate 2: Source 2 3, 4, 5, 6, 7, 8: Source 1 9: Drain (heatsink) Notice: Only use source 2 pin for gate input signal return. Please make sure that the main current flows into the source 1 pins. 4. Absolute Maximum Ratings (Note) (Ta = 25.
unless other.