TK19H50C Description
TK19H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) TK19H50C Switching Regulator Applications Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement mode : |Yfs| = 14 S (typ.) Unit: IDSS = 100 µA (max) (VDS = 500 V).