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TK1K0A60F - Silicon N-Channel MOSFET

Datasheet Summary

Features

  • (1) Easy to control Gate switching (2) Low drain-source on-resistance: RDS(ON) = 0.83 Ω (typ. ) (3) Enhancement mode: Vth = 2 to 4 V (VDS = 10 V, ID = 0.77 mA) 3. Packaging and Internal Circuit TK1K0A60F 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Single-puls.

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Datasheet Details

Part number TK1K0A60F
Manufacturer Toshiba
File Size 456.83 KB
Description Silicon N-Channel MOSFET
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MOSFETs Silicon N-Channel MOS (π-MOS) TK1K0A60F 1. Applications • Switching Power Supplies 2. Features (1) Easy to control Gate switching (2) Low drain-source on-resistance: RDS(ON) = 0.83 Ω (typ.) (3) Enhancement mode: Vth = 2 to 4 V (VDS = 10 V, ID = 0.77 mA) 3. Packaging and Internal Circuit TK1K0A60F 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Single-pulse avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Isolation voltage (RMS) Mounting torque (Tc = 25 ) (t = 1.
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