TK1K2A60F - Silicon N-Channel MOSFET

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Toshiba

Part number	TK1K2A60F
Manufacturer	Toshiba
File Size	456.14 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK1K2A60F Datasheet
Additional preview pages of the TK1K2A60F datasheet.

(1) Easy to control Gate switching (2) Low drain-source on-resistance: RDS(ON) = 1 Ω (typ. ) (3) Enhancement mode: Vth = 2 to 4 V (VDS = 10 V, ID = 0.63 mA) 3. Packaging and Internal Circuit TK1K2A60F 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Single-pulse a.

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Published: May 24, 2019 |