TK1R4S04PB Datasheet Silicon N-Channel MOSFET

Manufacturer: Toshiba

Datasheet Details

MOSFETs Silicon N-channel MOS (U-MOS-H) TK1R4S04PB 1.

Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2.

(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 1.1 mΩ (typ. ) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK1R4S04PB 1: Gate 2: Drain (heatsink) 3: Source DPAK+ 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 40 V Gate-source voltage VGSS ±20 Drain current (DC).