TK7R0E08QM Datasheet | Toshiba

Features (1) High-speed switching (2) Small gate charge: QSW = 11.6 n C (typ.) (3) Small output charge: Qoss = 46 n C (typ.) (4) Low drain-source on-resistance: RDS(ON) = 5.5 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.5 m A) 3. Packaging and Internal Circuit TO-220 1: Gate 2: Drain (heatsink) 3: Source ©2020-2021 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2020-11 2021-01-18 Rev.1.0 4. Absolute Maximum Ratings (Note) (Ta = 25 - unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Single-pulse avalanche current Channel temperature Storage temperature Mounting torque (Tc = 25 - ) (Silicon limit) (t = 100 µs) (Tc = 25 - ) (Note 1) (Note 1), (Note 2) (Note 1) (Note 3) (Note 3) VDSS VGSS ID ID IDP PD EAS IAS Tch Tstg TOR 80 ±20 64 82 240 87 38 64 175 -55 to 175 0.6 W m J A - N- m Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance (Tc = 25 - ) Channel-to-ambient thermal resistance (Ta =...