TK7R7P10PL Datasheet | Toshiba

Features (1) High-speed switching (2) Small gate charge: QSW = 13 n C (typ.) (3) Small output charge: Qoss = 47 n C (typ.) (4) Low drain-source on-resistance: RDS(ON) = 6.5 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 m A) 3. Packaging and Internal Circuit DPAK 1: Gate 2: Drain (heatsink) 3: Source ©2017-2021 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2018-01 2021-01-27 Rev.2.0 4. Absolute Maximum Ratings (Note) (Ta = 25 - unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) VDSS VGSS ±20 (Tc = 25 - ) (Note 1) Drain current (DC) Drain current (pulsed) Power dissipation (Silicon limit) (Note 1), (Note 2) (t = 100 µs) (Note 1) (Tc = 25 - ) Single-pulse avalanche energy (Note 3) 27 m J Single-pulse avalanche current Channel temperature Storage...