TK7R4A15Q5 Datasheet | Toshiba

Features (1) Fast reverse recovery time: trr = 44 ns (typ.) (2) Small reverse recovery charge : Qrr = 40 n C (typ.) (3) Small gate charge: QSW = 20 n C (typ.) (4) Low drain-source on-resistance: RDS(ON) = 6.2 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V) (6) Enhancement mode: Vth = 3.1 to 4.5 V (VDS = 10 V, ID = 1.4 m A) 3. Packaging and Internal Circuit TO-220SIS 1: Gate 2: Drain 3: Source ©2023-2024 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2024-07 2024-06-26 Rev.1.0 4. Absolute Maximum Ratings (Note) (Ta = 25 - unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Single-pulse avalanche current Channel temperature Storage temperature Isolation voltage (RMS) Mounting torque (Tc = 25 - ) (Silicon limit) (t = 100 µs) (Tc = 25 - ) (t = 1.0 s) (Note 1) (Note 1), (Note 2) (Note 1) (Note 3) (Note 3) VDSS VGSS ID ID IDP PD EAS IAS Tch Tstg VISO(RMS) TOR 150 ±20 57 57 330 46 80 57 175 -55 to 175 2000 0.6 W m J A - V N- m Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance (Tc = 25 - ) Channel-to-ambient thermal...