TK7R4A10PL Datasheet | Toshiba

Features (1) High-speed switching (2) Small gate charge: QSW = 13 n C (typ.) (3) Small output charge: Qoss = 47 n C (typ.) (4) Low drain-source on-resistance: RDS(ON) = 6.3 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 m A) 3. Packaging and Internal Circuit TO-220SIS 1: Gate 2: Drain 3: Source ©2017-2021 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2018-01 2021-01-27 Rev.2.0 4. Absolute Maximum Ratings (Note) (Ta = 25 - unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Single-pulse avalanche current Channel temperature Storage temperature Isolation voltage (RMS) Mounting torque (Tc = 25 - ) (t = 100 µs) (Tc = 25 - ) (t = 1.0 s) (Note 1) (Note 1) (Note 2) (Note 2) VDSS VGSS ID IDP PD EAS IAS Tch Tstg VISO(RMS) TOR 100 ±20 50 270 42 55 50 175 -55 to 175 2000 0.6 V V A A W m J A - - V N- m Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance (Tc = 25 - ) Channel-to-ambient thermal resistance (Ta = 25 - ) Note 1: Ensure that the channel temperature does not exceed...