Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U- MOS III)
Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications l Low drain- source ON resistance: RDS (ON) = 25 mΩ (typ.) l High forward transfer admittance: |Yfs| = 7.0 S (typ.) l Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) l Enhancement- mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 30 30 ±20 5.5 22 1.5 W PD(2) 1.1 Unit V V V A
Drain power dissipation (t =...