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TPC8211
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III)
TPC8211
Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications
l Low drain−source ON resistance: RDS (ON) = 25 mΩ (typ.) l High forward transfer admittance: |Yfs| = 7.0 S (typ.) l Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) l Enhancement−mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 30 30 ±20 5.5 22 1.5 W PD(2) 1.
TPC8211 Datasheet
