TPC8211 Description
TPC8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III) TPC8211 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications l Low drain−source ON resistance: RDS (ON) = 25 mΩ (typ.) l High forward transfer admittance: |Yfs| = 7.0 S (typ.) l Low leakage current:.
TPC8211 Key Features
- Low drain−source ON resistance: RDS (ON) = 25 mΩ (typ.)
- High forward transfer admittance: |Yfs| = 7.0 S (typ.)
- Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
- Enhancement−mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteris