TPCA8131 Datasheet Silicon P-channel MOSFET

Manufacturer: Toshiba

Overview: MOSFETs Silicon P-Channel MOS (U-MOS) TPCA8131 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2.

Datasheet Details

(1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 12.4 mΩ (typ. ) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) (4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 mA) 3. Packaging and Internal Circuit TPCA8131 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS -30 V Gate-source voltage.