Datasheet Summary
TOSHIBA Transistor Silicon NPN Epitaxial Type
Portable Equipment Applications Switching Applications Inverter Lighting Applications
- -
- - Small footprint due to small and thin package High DC current gain : hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation : VCE (sat) = 0.14 V (max) High-speed switching : tf = 120 ns (typ.)
1 4
Unit: mm
0.33±0.05 0.05 M A
8 5
2.4±0.1
0.65 2.9±0.1
0.05 M B
Maximum Ratings (Ta = 25°C)
0.8±0.05 0.025
0.17±0.02
0.28 +0.1 -0.11
Characteristics Collector-base voltage
Symbol VCBO VCEX VCEO
Rating 100 80 50 7 3.0 5.0 300 1.77
Unit
1.12 -0.12
+0.13
V V V V A mA
1.Emitter1 2.Base1 3.Emitter2 4.Base2
5.Colle...