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TPCP8902 - Silicon Dual Transistor

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Datasheet Details

Part number TPCP8902
Manufacturer Toshiba
File Size 244.07 KB
Description Silicon Dual Transistor
Datasheet download datasheet TPCP8902 Datasheet

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TPCP8902 TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) TPCP8902 Portable Equipment Applications Switching Applications 0.33±0.05 0.05 M A 8 5 Unit: mm • Small footprint due to small and thin package • High DC current gain : PNP hFE = 200 to 500 (IC = −0.2 A) : NPN hFE = 200 to 500 (IC = 0.2 A) • Low collector-emitter saturation : PNP VCE (sat) = −0.20 V (max) : NPN VCE (sat) = 0.14 V (max) • High-speed switching : PNP tf = 40 ns (typ.) : NPN tf = 45 ns (typ.) 0.475 1 4 0.65 2.9±0.1 S 0.025 S 0.17±0.02 B 0.05 M B A 0.8±0.05 0.28 +0.1 -0.11 2.4±0.1 2.8±0.1 Absolute Maximum Ratings (Ta = 25°C) 1.12+-00..
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