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TPH4R10ANL - Silicon N-channel MOSFET

Key Features

  • (1) High-speed switching (2) Small gate charge : QSW = 21 nC (typ. ) (3) Small output charge : Qoss = 74 nC (typ. ) (4) Low drain-source on-resistance : RDS(ON) =3.3 mΩ (typ. )(VGS = 10 V ) (5) Low leakage current : IDSS = 10 µA (max)(VDS = 100 V ) (6) Enhancement mode : Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPH4R10ANL SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial.

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Datasheet Details

Part number TPH4R10ANL
Manufacturer Toshiba
File Size 609.71 KB
Description Silicon N-channel MOSFET
Datasheet download datasheet TPH4R10ANL Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-channel MOS (U-MOS-H) TPH4R10ANL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge : QSW = 21 nC (typ.) (3) Small output charge : Qoss = 74 nC (typ.) (4) Low drain-source on-resistance : RDS(ON) =3.3 mΩ (typ.)(VGS = 10 V ) (5) Low leakage current : IDSS = 10 µA (max)(VDS = 100 V ) (6) Enhancement mode : Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPH4R10ANL SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-09 2019-10-18 Rev.3.0 TPH4R10ANL 4.