TPH4R10ANL - Silicon N-channel MOSFET

Product Overview

Toshiba

Part number	TPH4R10ANL
Manufacturer	Toshiba
File Size	609.71 KB
Description	Silicon N-channel MOSFET
Datasheet	TPH4R10ANL Datasheet
Additional preview pages of the TPH4R10ANL datasheet.

(1) High-speed switching (2) Small gate charge : QSW = 21 nC (typ. ) (3) Small output charge : Qoss = 74 nC (typ. ) (4) Low drain-source on-resistance : RDS(ON) =3.3 mΩ (typ. )(VGS = 10 V ) (5) Low leakage current : IDSS = 10 µA (max)(VDS = 100 V ) (6) Enhancement mode : Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPH4R10ANL SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial.

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Published: Feb 28, 2025 |