Datasheet Summary
MOSFETs Silicon N-channel MOS (U-MOS-H)
1. Applications
- High-Efficiency DC-DC Converters
- Switching Voltage Regulators
- Motor Drivers
2. Features
(1) High-speed switching (2) Small gate charge : QSW = 21 nC (typ.) (3) Small output charge : Qoss = 74 nC (typ.) (4) Low drain-source on-resistance : RDS(ON) =3.3 mΩ (typ.)(VGS = 10 V ) (5) Low leakage current : IDSS = 10 µA (max)(VDS = 100 V ) (6) Enhancement mode : Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1.0 mA)
3. Packaging and Internal Circuit
SOP Advance
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
©2016-2019 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2016-09
2019-10-18...