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TPH4R50ANH - Field Effect Transistor

Key Features

  • (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 22 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 1 2012-07-21 Rev.1.0 Free Datasheet http://www. datasheet4u. com/ TPH4R50ANH 4. Absolute Maximum Ratings (Note) (Ta = 2.

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Datasheet Details

Part number TPH4R50ANH
Manufacturer Toshiba
File Size 257.68 KB
Description Field Effect Transistor
Datasheet download datasheet TPH4R50ANH Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPH4R50ANH MOSFETs Silicon N-channel MOS (U-MOS-H) TPH4R50ANH 1. Applications • • • DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 22 nC (typ.) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 1 2012-07-21 Rev.1.0 Free Datasheet http://www.datasheet4u.com/ TPH4R50ANH 4.