TPH4R50ANH - Field Effect Transistor

Product Overview

Toshiba

Part number	TPH4R50ANH
Manufacturer	Toshiba
File Size	257.68 KB
Description	Field Effect Transistor
Datasheet	TPH4R50ANH Datasheet
Additional preview pages of the TPH4R50ANH datasheet.

(1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 22 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 1 2012-07-21 Rev.1.0 Free Datasheet http://www. datasheet4u. com/ TPH4R50ANH 4. Absolute Maximum Ratings (Note) (Ta = 2.

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Published: Nov 11, 2013 |