TPH4R606NH - MOSFETs

Product Overview

Toshiba

Part number	TPH4R606NH
Manufacturer	Toshiba
File Size	237.56 KB
Description	MOSFETs
Datasheet	TPH4R606NH Datasheet
Additional preview pages of the TPH4R606NH datasheet.

(1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 19 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Dra.

📁 Similar Datasheet

TPH4805D - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH4805DA - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH4805S - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH4809D - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH4809DA - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH4809S - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH4812D - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH4812DA - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)

Other Datasheets by Toshiba

Published: Sep 4, 2014 |