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TPN4R203NC Datasheet Field Effect Transistor

Manufacturer: Toshiba

Overview: TPN4R203NC MOSFETs Silicon N-channel MOS (U-MOS) TPN4R203NC 1. Applications • • Lithium-Ion Secondary Batteries Power Management Switches 2.

Key Features

  • (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pul.

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