Datasheet Summary
MOSFETs Silicon P-Channel MOS (U-MOS)
1. Applications
- Lithium-Ion Secondary Batteries
- Power Management Switches
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = -4.5 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA)
3. Packaging and Internal Circuit
TSON Advance
1,2,3: Source 4: Gate 5, 6, 7, 8: Drain
©2019 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2014-12
2019-10-30 Rev.5.0
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