TRS12A65F - SiC Schottky Barrier Diode

Product Overview

Toshiba

Part number	TRS12A65F
Manufacturer	Toshiba
File Size	253.05 KB
Description	SiC Schottky Barrier Diode
Datasheet	TRS12A65F Datasheet
Additional preview pages of the TRS12A65F datasheet.

(1) Chip design of 2nd generation (2) High non-repetitive peak forward surge current: IFSM = 92 A (max) (3) Low junction capacitance: Cj = 44 pF (typ. ) (4) Low reverse current: IR = 0.6 µA (typ. ) (5) Isolation package: TO-220F-2L 3. Packaging and Internal Circuit TRS12A65F TO-220F-2L 1: Cathode 2: Anode ©2018-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2019-02 2019-06-25 Rev.1.0 TRS12A65F 4. Absolute Maximum Ratings (Note) (Unless otherwise spec.

📁 Similar Datasheet

Other Datasheets by Toshiba

Published: Feb 28, 2025 |