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TRS12A65F - SiC Schottky Barrier Diode

Key Features

  • (1) Chip design of 2nd generation (2) High non-repetitive peak forward surge current: IFSM = 92 A (max) (3) Low junction capacitance: Cj = 44 pF (typ. ) (4) Low reverse current: IR = 0.6 µA (typ. ) (5) Isolation package: TO-220F-2L 3. Packaging and Internal Circuit TRS12A65F TO-220F-2L 1: Cathode 2: Anode ©2018-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2019-02 2019-06-25 Rev.1.0 TRS12A65F 4. Absolute Maximum Ratings (Note) (Unless otherwise spec.

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Datasheet Details

Part number TRS12A65F
Manufacturer Toshiba
File Size 253.05 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet TRS12A65F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SiC Schottky Barrier Diode TRS12A65F 1. Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters 2. Features (1) Chip design of 2nd generation (2) High non-repetitive peak forward surge current: IFSM = 92 A (max) (3) Low junction capacitance: Cj = 44 pF (typ.) (4) Low reverse current: IR = 0.6 µA (typ.) (5) Isolation package: TO-220F-2L 3. Packaging and Internal Circuit TRS12A65F TO-220F-2L 1: Cathode 2: Anode ©2018-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2019-02 2019-06-25 Rev.1.0 TRS12A65F 4.