TTA011
Features
(1) High DC current gain: h FE = 200 to 500 (VCE = -2 V, IC = -0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.27 V (max) (IC = -1.6 A, IB = -53 m A) (3) High-speed switching: tf = 60 ns (typ.) (IC = -1.6 A)
3. Packaging and Internal Circuit
PW-Mini
1. Base 2. Collector (Heatsink) 3. Emitter
©2022-2023
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2022-10
2023-01-20 Rev.2.0
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
- )
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-50
Collector-emitter voltage
VCEO
-50
Emitter-base voltage
VEBO
-7
Collector current (DC)
(Note 1)
-5
Collector current (pulsed)
(Note 1)
-10
Base...
