Datasheet4U Logo Datasheet4U.com

TTA012 - Silicon PNP Epitaxial Type Bipolar Transistors

Key Features

  • (1) High DC current gain: hFE = 100 to 200 (VCE = -2 V, IC = -0.4 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.22 V (max) (IC = -1.2 A, IB = -0.12 A) (3) High-speed switching: tf = 35 ns (typ. ) (IC = -1.2 A) 3. Packaging and Internal Circuit PW-Mini 1. Base 2. Collector (Heatsink) 3. Emitter ©2022-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2022-10 2023-01-18 Rev.2.0 TTA012 4. Absolute Maximum Ratings (Note) (Unless otherwise s.

📥 Download Datasheet

Datasheet Details

Part number TTA012
Manufacturer Toshiba
File Size 298.82 KB
Description Silicon PNP Epitaxial Type Bipolar Transistors
Datasheet download datasheet TTA012 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TTA0001 PNP Transistor INCHANGE
TTA0001 Silicon PNP Transistor Toshiba Semiconductor
TTA0002 PNP Transistor INCHANGE
TTA0002 Silicon PNP Transistor Toshiba Semiconductor
TTA007 Silicon PNP Transistor Toshiba Semiconductor

Other Datasheets by Toshiba

Part Number Description
TTA010 Silicon PNP Triple-Diffused Type Bipolar Transistors
TTA011 Silicon PNP Epitaxial Type Bipolar Transistors
TTA013 Silicon PNP Epitaxial Type Bipolar Transistors
TTA014 Silicon PNP Epitaxial Type Bipolar Transistors
TTA003 Silicon PNP Epitaxial Type Bipolar Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Bipolar Transistors Silicon PNP Epitaxial Type TTA012 TTA012 1. Applications • High-Speed Switching • DC-DC Converters 2. Features (1) High DC current gain: hFE = 100 to 200 (VCE = -2 V, IC = -0.4 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.22 V (max) (IC = -1.2 A, IB = -0.12 A) (3) High-speed switching: tf = 35 ns (typ.) (IC = -1.2 A) 3. Packaging and Internal Circuit PW-Mini 1. Base 2. Collector (Heatsink) 3. Emitter ©2022-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2022-10 2023-01-18 Rev.2.0 TTA012 4.