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TTA014 - Silicon PNP Epitaxial Type Bipolar Transistors

Key Features

  • (1) High DC current gain: hFE = 120 to 240 (VCE = -2 V, IC = -0.25 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.35 V (max) (IC = -0.75 A, IB = -75 mA) (3) High-speed switching: tf = 65 ns (typ. ) (IC = -0.75 A) 3. Packaging and Internal Circuit New PW-Mold 1. Base 2. Collector (Heatsink) 3. Emitter ©2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-07 2023-08-18 Rev.2.0 TTA014 4. Absolute Maximum Ratings (Note) (Unless otherwise.

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Datasheet Details

Part number TTA014
Manufacturer Toshiba
File Size 451.69 KB
Description Silicon PNP Epitaxial Type Bipolar Transistors
Datasheet download datasheet TTA014 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Bipolar Transistors Silicon PNP Epitaxial Type TTA014 TTA014 1. Applications • High-Speed Switching • DC-DC Converters 2. Features (1) High DC current gain: hFE = 120 to 240 (VCE = -2 V, IC = -0.25 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.35 V (max) (IC = -0.75 A, IB = -75 mA) (3) High-speed switching: tf = 65 ns (typ.) (IC = -0.75 A) 3. Packaging and Internal Circuit New PW-Mold 1. Base 2. Collector (Heatsink) 3. Emitter ©2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-07 2023-08-18 Rev.2.0 TTA014 4.