TTA013
Features
(1) High DC current gain: h FE = 120 to 240 (VCE = -2 V, IC = -0.25 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.32 V (max) (IC = -0.75 A, IB = -75 m A) (3) High-speed switching: tf = 65 ns (typ.) (IC = -0.75 A)
3. Packaging and Internal Circuit
PW-Mini
1. Base 2. Collector (Heatsink) 3. Emitter
©2022-2023
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2022-10
2023-01-18 Rev.2.0
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
- )
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-120
Collector-emitter voltage
VCEO
-120
Emitter-base voltage
VEBO
-7
Collector current (DC)
(Note 1)
-2.5
Collector current (pulsed)
(Note 1)
-5
Base...
