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TTA013 - Silicon PNP Epitaxial Type Bipolar Transistors

Datasheet Summary

Features

  • (1) High DC current gain: hFE = 120 to 240 (VCE = -2 V, IC = -0.25 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.32 V (max) (IC = -0.75 A, IB = -75 mA) (3) High-speed switching: tf = 65 ns (typ. ) (IC = -0.75 A) 3. Packaging and Internal Circuit PW-Mini 1. Base 2. Collector (Heatsink) 3. Emitter ©2022-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2022-10 2023-01-18 Rev.2.0 TTA013 4. Absolute Maximum Ratings (Note) (Unless otherwise.

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Datasheet Details

Part number TTA013
Manufacturer Toshiba
File Size 302.56 KB
Description Silicon PNP Epitaxial Type Bipolar Transistors
Datasheet download datasheet TTA013 Datasheet
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Bipolar Transistors Silicon PNP Epitaxial Type TTA013 TTA013 1. Applications • High-Speed Switching • DC-DC Converters 2. Features (1) High DC current gain: hFE = 120 to 240 (VCE = -2 V, IC = -0.25 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.32 V (max) (IC = -0.75 A, IB = -75 mA) (3) High-speed switching: tf = 65 ns (typ.) (IC = -0.75 A) 3. Packaging and Internal Circuit PW-Mini 1. Base 2. Collector (Heatsink) 3. Emitter ©2022-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2022-10 2023-01-18 Rev.2.0 TTA013 4.
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