XPH8R316MC
XPH8R316MC is Silicon P-Channel MOSFET manufactured by Toshiba.
Features
(1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 6.4 mΩ (typ.) (VGS = -10 V) (4) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (5) Enhancement mode: Vth = -1.0 to -2.1 V (VDS = -10 V, ID = -1 m A)
3. Packaging and Internal Circuit
SOP Advance(WF)
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
©2018-2023
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2023-05
2023-04-13 Rev.3.0
4. Absolute Maximum Ratings (Note) (Ta = 25
- unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation
(Tc = 25
- ) (t = 10 s)
(Note 1) (Note 2) (Note 2)
(Note 3)
VDSS VGSS
ID IDP PD
-60
+10/-20
-90
-180
Power dissipation
(t = 10 s)
(Note 4)
Single-pulse avalanche energy Single-pulse avalanche current Channel temperature Storage temperature
(Note 5)
(Note...
