XPN9R614MC Datasheet | Toshiba

Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 7.4 mΩ (typ.) (VGS = -10 V) (4) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (5) Enhancement mode: Vth = -1.0 to -2.1 V (VDS = -10 V, ID = -0.5 m A) 3. Packaging and Internal Circuit TSON Advance(WF) 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2018-2021 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2018-09 2021-12-08 Rev.6.0 4. Absolute Maximum Ratings (Note) (Ta = 25 - unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation (Tc = 25 - ) (t = 10 s) (Note 1) (Note 1) (Note 2) VDSS VGSS ID IDP PD -40 +10/-20 -40 -80 Power dissipation (t = 10 s) (Note 3) Single-pulse avalanche energy Single-pulse avalanche current Channel temperature Storage temperature (Note 4) (Note...