1SS319 Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS319 Low Voltage High Speed Switching Small package: SC-61 Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current:.
1SS319 is Silicon Epitaxial Schottky Barrier Type Diode manufactured by Toshiba .
| Part Number | Description |
|---|---|
| 1SS311 | Diode |
| 1SS312 | Silicon Epitaxial Planar Type Diode |
| 1SS313 | Silicon Epitaxial Planar Type Diode |
| 1SS314 | Silicon Epitaxial Planar Type Diode |
| 1SS315 | Silicon Epitaxial Planar Type Diode |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS319 Low Voltage High Speed Switching Small package: SC-61 Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current:.