1SS367 Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application 1SS367 Unit: mm z Small package z Low forward voltage: Using continuously under heavy loads (e.g.
- Part: 1SS367
- Manufacturer: Toshiba (official site)
- Size: 212.30 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
SEMTECH |
1SS367 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
EIC Semiconductor |
1SS367 | 15V 100mA SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
Kexin Semiconductor |
1SS367 | HIGH SPEED SWITCHING DIODE |