1SS367 Datasheet | Specifications & PDF Download

1SS367 Silicon Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier T.

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application 1SS367 Unit: mm z Small package z Low forward voltage:

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1SS367 SILICON EPITAXIAL S CHOTTKY BARRIER DIODE High Speed Switching Applicatio PINNING Features PIN • Low forward voltage: VF = 0.23V (typ.) @

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