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1SS367 Matched Datasheet

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No Part Number Description Manufacture PDF
2 1SS367 SILICON EPITAXIAL PLANAR DIODE

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application 1SS367 Unit: mm z Small package z Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Rat
Toshiba Semiconductor
Toshiba Semiconductor
1SS367 pdf
1 1SS367 SILICON EPITAXIAL S CHOTTKY BARRIER DIODE

1SS367 SILICON EPITAXIAL S CHOTTKY BARRIER DIODE High Speed Switching Applicatio PINNING Features PIN • Low forward voltage: VF = 0.23V (typ.) @IF = 5mA 1 2 1 DESCRIPTION Cathode Anode 2 S3
SEMTECH
SEMTECH
1SS367 pdf


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