2SD1222 Description
2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2 A) plementary to 2SB907.