D2012 Description
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) High power dissipation:.
D2012 is 2SD2012 manufactured by Toshiba .
| Manufacturer | Part Number | Description |
|---|---|---|
STMicroelectronics |
D2012 | NPN Silicon Power Transistor |
Wuxi Youda Electronics |
D2012 | Si NPN Transistor |
Seme LAB |
D2012UK | METAL GATE RF SILICON FET |
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) High power dissipation:.