D2012 - NPN Silicon Power Transistor

STMicroelectronics

General Description

The 2SD2012 is a silicon NPN power transistor housed in TO-220F insulated package.

It is inteded for power linear and switching applications.

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D2012 npn silicon power transistor by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	D2012
Manufacturer	STMicroelectronics
File Size	126.59 KB
Description	NPN Silicon Power Transistor
Datasheet	D2012 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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® 2SD2012 NPN SILICON POWER TRANSISTOR s HIGH DC CURRENT GAIN s LOW SATURATION VOLTAGE s INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS s GENERAL PURPOSE POWER AMPLIFIERS s GENERAL PURPOSE SWITCHING DESCRIPTION The 2SD2012 is a silicon NPN power transistor housed in TO-220F insulated package. It is inteded for power linear and switching applications. 3 2 1 TO-220F INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC ICM IB Ptot Visol Tstg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Total Dissipation at Tc ≤ 25 oC Insulation Withstand Voltage (RMS) from All Three Leads to Exernal Heatsink Storage Temperature Max.