Datasheet Details
| Part number | D2012 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 126.59 KB |
| Description | NPN Silicon Power Transistor |
| Datasheet | D2012-STMicroelectronics.pdf |
|
|
Overview: ® 2SD2012 NPN SILICON POWER TRANSISTOR s HIGH DC CURRENT GAIN s LOW SATURATION VOLTAGE s INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS s GENERAL PURPOSE POWER AMPLIFIERS s GENERAL PURPOSE.
| Part number | D2012 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 126.59 KB |
| Description | NPN Silicon Power Transistor |
| Datasheet | D2012-STMicroelectronics.pdf |
|
|
|
The 2SD2012 is a silicon NPN power transistor housed in TO-220F insulated package.
It is inteded for power linear and switching applications.
3 2 1 TO-220F INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC ICM IB Ptot Visol Tstg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Total Dissipation at Tc ≤ 25 oC Insulation Withstand Voltage (RMS) from All Three Leads to Exernal Heatsink Storage Temperature Max.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
D2012 | Si NPN Transistor | Wuxi Youda Electronics |
 |
D2012 | 2SD2012 | Toshiba Semiconductor |
 |
D2012UK | METAL GATE RF SILICON FET | Seme LAB |
| Part Number | Description |
|---|---|
| D20 | Memory Micromodules |
| D20N20 | N-Channel Power MOSFET |
| D20NF06 | N-channel Power MOSFET |
| D20NF06L | N-channel Power MOSFET |