D2012
Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) • H...
| Part | D2012 |
|---|---|
| Description | 2SD2012 |
| Manufacturer | Toshiba |
| Size | 121.20 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| D2012 | Wuxi Youda Electronics | Si NPN Transistor |
| D2012UK | Seme LAB | METAL GATE RF SILICON FET |
| D2013UK | Seme LAB | METAL GATE RF SILICON FET |
| D2014UK | Seme LAB | RF SILICON FET |
| D2010UK | Seme LAB | METAL GATE RF SILICON FET |